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IXTQ52N30P Tech Specifications
| Category | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | Littelfuse | |
| EU RoHS | Compliant with Exemption | |
| ECCN (US) | EAR99 | |
| HTS | 8541.21.00.95 | |
| Automotive | No | |
| PPAP | No | |
| Category | Power MOSFET | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Maximum Drain Source Voltage (V) | 300 | |
| Maximum Gate Source Voltage (V) | ±20 | |
| Maximum Gate Threshold Voltage (V) | 5 | |
| Maximum Continuous Drain Current (A) | 52 | |
| Maximum Gate Source Leakage Current (nA) | 100 | |
| Maximum IDSS (uA) | 25 | |
| Maximum Drain Source Resistance (mOhm) | 73@10V | |
| Typical Gate Charge @ Vgs (nC) | 110@10V | |
| Typical Gate Charge @ 10V (nC) | 110 | |
| Typical Input Capacitance @ Vds (pF) | 3490@25V |
| Maximum Power Dissipation (mW) | 400000 | |
| Typical Fall Time (ns) | 20 | |
| Typical Rise Time (ns) | 22 | |
| Typical Turn-Off Delay Time (ns) | 60 | |
| Typical Turn-On Delay Time (ns) | 24 | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 150 | |
| Mounting | Through Hole | |
| Package Width | 4.9(Max) | |
| Package Length | 15.8(Max) | |
| PCB changed | 3 | |
| Tab | Tab | |
| Standard Package Name | TO-3P | |
| Supplier Package | TO-3P | |
| Lead Shape | Through Hole | |
| Part Status | Active | |
| Pin Count | 3 | |
| Configuration | Single | |
| Channel Type | N |
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