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DM2G75SH6N Tech Specifications

Category Transistors - IGBTs - Modules
Manufacturer MagnaChip
EU RoHS Supplier Unconfirmed
ECCN (US) EAR99
Automotive Unknown
PPAP Unknown
Typical Collector Emitter Saturation Voltage (V) 2.1
Maximum Collector-Emitter Voltage (V) 600
Maximum Power Dissipation (mW) 330
Maximum Gate Emitter Voltage (V) ±20
Maximum Continuous Collector Current (A) 100
Maximum Gate Emitter Leakage Current (uA) 0.1
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 150
Mounting Screw
Package Width 35
Package Length 93
PCB changed 7
Supplier Package Case 7DM-1
Part Status Obsolete
Pin Count 7
Configuration Dual
Channel Type N
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