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MDD3N50GRH Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer MagnaChip
EU RoHS Compliant
ECCN (US) EAR99
HTS 8541.29.00.95
Automotive Unknown
PPAP Unknown
Category Power MOSFET
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 500
Maximum Gate Source Voltage (V) ±30
Maximum Gate Threshold Voltage (V) 5
Maximum Continuous Drain Current (A) 2.8
Maximum Gate Source Leakage Current (nA) 100
Maximum IDSS (uA) 1
Maximum Drain Source Resistance (MOhm) 2500@10V
Typical Gate Charge @ Vgs (nC) 6.75@10V
Typical Gate Charge @ 10V (nC) 6.75
Typical Input Capacitance @ Vds (pF) 285@25V
Maximum Power Dissipation (mW) 45000
Typical Fall Time (ns) 20
Typical Rise Time (ns) 22
Typical Turn-Off Delay Time (ns) 33
Typical Turn-On Delay Time (ns) 19
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Surface Mount
Package Height 2.39(Max)
Package Width 6.1
Package Length 6.73(Max)
PCB changed 2
Tab Tab
Standard Package Name TO-252
Supplier Package DPAK
Lead Shape Gull-wing
Reflow Temperature-Max (s) NOT SPECIFIED
Rohs Code Yes
Manufacturer Part Number MDD3N50GRH
Manufacturer MagnaChip Semiconductor Ltd
Part Life Cycle Code Active
Ihs Manufacturer MAGNACHIP SEMICONDUCTOR LTD
Risk Rank 5.73
Packaging Tape and Reel
Part Status Active
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Pin Count 3
Configuration Single
Channel Type N
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