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MDF10N60BTH Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer MagnaChip
EU RoHS Compliant
ECCN (US) EAR99
HTS 8541.29.00.95
Automotive Unknown
PPAP Unknown
Category Power MOSFET
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 600
Maximum Gate Source Voltage (V) ±30
Maximum Gate Threshold Voltage (V) 4
Maximum Continuous Drain Current (A) 10
Maximum Gate Source Leakage Current (nA) 100
Maximum IDSS (uA) 1
Maximum Drain Source Resistance (MOhm) 700@10V
Typical Gate Charge @ Vgs (nC) 28.1@10V
Typical Gate Charge @ 10V (nC) 28.1
Typical Input Capacitance @ Vds (pF) 1409@25V
Maximum Power Dissipation (mW) 48000
Typical Fall Time (ns) 39
Typical Rise Time (ns) 35
Typical Turn-Off Delay Time (ns) 116
Typical Turn-On Delay Time (ns) 23
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Through Hole
Package Height 16.13(Max)
Package Width 4.93(Max)
Package Length 10.71(Max)
PCB changed 3
Tab Tab
Standard Package Name TO-220
Supplier Package TO-220F
Lead Shape Through Hole
Packaging Tube
Part Status Active
Pin Count 3
Configuration Single
Channel Type N
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