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MDF10N65BTH Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer MagnaChip
EU RoHS Compliant
ECCN (US) EAR99
HTS 8541.29.00.95
Automotive Unknown
PPAP Unknown
Category Power MOSFET
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 650
Maximum Gate Source Voltage (V) ±30
Maximum Gate Threshold Voltage (V) 4
Maximum Continuous Drain Current (A) 10
Maximum Gate Source Leakage Current (nA) 100
Maximum IDSS (uA) 1
Maximum Drain Source Resistance (MOhm) 1000@10V
Typical Gate Charge @ Vgs (nC) 29.3@10V
Typical Gate Charge @ 10V (nC) 29.3
Typical Input Capacitance @ Vds (pF) 1202@25V
Maximum Power Dissipation (mW) 47700
Typical Fall Time (ns) 49
Typical Rise Time (ns) 48
Typical Turn-Off Delay Time (ns) 96.5
Typical Turn-On Delay Time (ns) 19.4
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Through Hole
Package Height 16.13(Max)
Package Width 4.93(Max)
Package Length 10.71(Max)
PCB changed 3
Tab Tab
Standard Package Name TO-220
Supplier Package TO-220F
Lead Shape Through Hole
Package Description ,
Reflow Temperature-Max (s) NOT SPECIFIED
Rohs Code Yes
Manufacturer Part Number MDF10N65BTH
Manufacturer MagnaChip Semiconductor Ltd
Part Life Cycle Code Active
Ihs Manufacturer MAGNACHIP SEMICONDUCTOR LTD
Risk Rank 5.74
Packaging Tube
Part Status Active
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Pin Count 3
Configuration Single
Channel Type N
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