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MDP1723TH Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer MagnaChip
EU RoHS Compliant
ECCN (US) EAR99
HTS 8541.29.00.95
Automotive Unknown
PPAP Unknown
Category Power MOSFET
Process Technology TMOS
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 40
Maximum Gate Source Voltage (V) ±20
Maximum Gate Threshold Voltage (V) 4
Maximum Continuous Drain Current (A) 191
Maximum Gate Source Leakage Current (nA) 100
Maximum IDSS (uA) 1
Maximum Drain Source Resistance (MOhm) 2.3@10V
Typical Gate Charge @ Vgs (nC) 88.3@10V
Typical Gate Charge @ 10V (nC) 88.3
Typical Input Capacitance @ Vds (pF) 5755@20V
Maximum Power Dissipation (mW) 138900
Typical Fall Time (ns) 42.7
Typical Rise Time (ns) 14.7
Typical Turn-Off Delay Time (ns) 84.8
Typical Turn-On Delay Time (ns) 24.3
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Through Hole
Package Height 9.65(Max)
Package Width 4.83(Max)
Package Length 10.67(Max)
PCB changed 3
Tab Tab
Standard Package Name TO-220
Supplier Package TO-220
Packaging Tube
Pin Count 3
Configuration Single
Channel Type N
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