MDP1901TH Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer MagnaChip
Mount Through Hole
Number of Pins 3Pins
EU RoHS Compliant
ECCN (US) EAR99
HTS 8541.29.00.95
Automotive Unknown
PPAP Unknown
Category Power MOSFET
Process Technology TMOS
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 100
Maximum Gate Source Voltage (V) ±20
Maximum Gate Threshold Voltage (V) 4
Maximum Continuous Drain Current (A) 36
Maximum Gate Source Leakage Current (nA) 100
Maximum IDSS (uA) 1
Maximum Drain Source Resistance (MOhm) 22@10V
Typical Gate Charge @ Vgs (nC) 75@10V
Typical Gate Charge @ 10V (nC) 75
Typical Input Capacitance @ Vds (pF) 3045@30V
Maximum Power Dissipation (mW) 34000
Typical Fall Time (ns) 20
Typical Rise Time (ns) 12
Typical Turn-Off Delay Time (ns) 70
Typical Turn-On Delay Time (ns) 25
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Through Hole
Package Height 9.65(Max)
Package Width 4.83(Max)
Package Length 10.67(Max)
PCB changed 3
Tab Tab
Standard Package Name TO-220
Supplier Package TO-220
Number of Elements 1 Element
RoHS Compliant
Packaging Tube
Part Status Active
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Pin Count 3
Configuration Single
Power Dissipation 34 W
Continuous Drain Current (ID) 36 A
Gate to Source Voltage (Vgs) 20 V
Channel Type N
Radiation Hardening No
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