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MDP1923TH Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer MagnaChip
Mount Through Hole
Number of Pins 3Pins
EU RoHS Compliant
ECCN (US) EAR99
HTS 8541.29.00.95
Automotive Unknown
PPAP Unknown
Category Power MOSFET
Process Technology TMOS
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 100
Maximum Gate Source Voltage (V) ±20
Maximum Gate Threshold Voltage (V) 4
Maximum Continuous Drain Current (A) 69
Maximum Gate Source Leakage Current (nA) 100
Maximum IDSS (uA) 1
Maximum Drain Source Resistance (MOhm) 13.9@10V
Typical Gate Charge @ Vgs (nC) 42.8@10V
Typical Gate Charge @ 10V (nC) 42.8
Typical Input Capacitance @ Vds (pF) 2802@40V
Maximum Power Dissipation (mW) 139000
Typical Fall Time (ns) 11.9
Typical Rise Time (ns) 10.1
Typical Turn-Off Delay Time (ns) 32.5
Typical Turn-On Delay Time (ns) 10.6
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Through Hole
Package Height 9.65(Max)
Package Width 4.83(Max)
Package Length 10.67(Max)
PCB changed 3
Tab Tab
Standard Package Name TO-220
Supplier Package TO-220
RoHS Non-Compliant
Turn Off Delay Time 32.5 ns
Package Description ,
Reflow Temperature-Max (s) NOT SPECIFIED
Rohs Code Yes
Manufacturer Part Number MDP1923TH
Manufacturer MagnaChip Semiconductor Ltd
Part Life Cycle Code Active
Ihs Manufacturer MAGNACHIP SEMICONDUCTOR LTD
Risk Rank 5.74
Packaging Tube
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Max Power Dissipation 139 W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Pin Count 3
Configuration Single
Element Configuration Single
Turn On Delay Time 10.6 ns
Continuous Drain Current (ID) 69 A
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 2.802 nF
Channel Type N
Drain to Source Resistance 13.9 mΩ
Width 4.83 mm
Height 16.51 mm
Length 10.67 mm
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