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MDS9652EURH Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer MagnaChip
EU RoHS Compliant
ECCN (US) EAR99
HTS 8541.29.00.95
Automotive Unknown
PPAP Unknown
Category Power MOSFET
Process Technology TMOS
Channel Mode Enhancement
Number of Elements per Chip 2Elements per Chips
Maximum Drain Source Voltage (V) 30
Maximum Gate Source Voltage (V) ±20
Maximum Gate Threshold Voltage (V) 3
Maximum Continuous Drain Current (A) 7.2@N Channel|6.1@P Channel
Maximum Gate Source Leakage Current (nA) 10000
Maximum IDSS (uA) 1
Typical Gate Charge @ Vgs (nC) 12.8@10V@N Channel|25.1@10V@P Channel
Typical Gate Charge @ 10V (nC) 12.8@N Channel|25.1@P Channel
Typical Input Capacitance @ Vds (pF) 635@15V@N Channel|1128@15V@P Channel
Maximum Power Dissipation (mW) 2000
Typical Fall Time (ns) 22@N Channel|11.6@P Channel
Typical Rise Time (ns) 23@N Channel|20.8@P Channel
Typical Turn-Off Delay Time (ns) 37@N Channel|27.6@P Channel
Typical Turn-On Delay Time (ns) 4.2@N Channel|11.6@P Channel
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Surface Mount
Package Height 1.38
Package Width 3.9
Package Length 4.9
PCB changed 8
Standard Package Name SOP
Supplier Package SOIC
Lead Shape Gull-wing
Reflow Temperature-Max (s) NOT SPECIFIED
Rohs Code Yes
Manufacturer Part Number MDS9652EURH
Manufacturer MagnaChip Semiconductor Ltd
Part Life Cycle Code Active
Ihs Manufacturer MAGNACHIP SEMICONDUCTOR LTD
Risk Rank 5.72
Packaging Tape and Reel
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Pin Count 8
Configuration Dual Dual Drain
Channel Type N|P
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