MagnaChip Semiconductor DA2F100N4S RF Diodes
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DA2F100N4S Tech Specifications
| Category | Diodes - RF | |
| Manufacturer | MagnaChip | |
| Peak Reverse Repetitive Voltage (V) | 400 | |
| Maximum Continuous Forward Current (A) | 200 | |
| Peak Non-Repetitive Surge Current (A) | 2000 | |
| Peak Forward Voltage (V) | 1.3@100A | |
| Peak Reverse Current (uA) | 1000 | |
| Maximum Power Dissipation (mW) | 350000 | |
| Peak Reverse Recovery Time (ns) | 120 | |
| Minimum Operating Temperature (°C) | -40 | |
| Maximum Operating Temperature (°C) | 150 | |
| Supplier Package | Case 5DM-1 | |
| Military | No |
| Mounting | Screw | |
| Package Height | 22.95(Max) | |
| Package Length | 94 | |
| Package Width | 27.5 | |
| PCB changed | 3 | |
| Maximum DC Reverse Voltage (V) | 320 | |
| ECCN (US) | EAR99 | |
| Part Status | Obsolete | |
| Type | Switching Diode | |
| Pin Count | 3 | |
| Configuration | Dual Common Cathode | |
| RoHS Status | Supplier Unconfirmed |
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DA2F100N4S Documents
Download datasheets and manufacturer documentation for DA2F100N4S
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