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DM1GL75SH12A Tech Specifications
Category | Transistors - IGBTs - Modules | |
Manufacturer | MagnaChip | |
ECCN (US) | EAR99 | |
Typical Collector Emitter Saturation Voltage (V) | 1.8 | |
Maximum Collector-Emitter Voltage (V) | 1200 | |
Maximum Power Dissipation (mW) | 600000 | |
Maximum Gate Emitter Voltage (V) | ±20 | |
Maximum Continuous Collector Current (A) | 100 | |
Maximum Gate Emitter Leakage Current (uA) | 0.2 | |
Minimum Operating Temperature (°C) | -40 | |
Maximum Operating Temperature (°C) | 150 |
Supplier Package | Case 7DM-1 | |
Military | No | |
Mounting | Screw | |
Package Length | 93 | |
Package Width | 35 | |
PCB changed | 7 | |
Part Status | Obsolete | |
Pin Count | 7 | |
Configuration | Single Dual Emitter | |
Channel Type | N | |
RoHS Status | Supplier Unconfirmed |
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DM1GL75SH12A Documents
Download datasheets and manufacturer documentation for DM1GL75SH12A
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