DM1GL75SH12A Tech Specifications

Category Transistors - IGBTs - Modules
Manufacturer MagnaChip
ECCN (US) EAR99
Typical Collector Emitter Saturation Voltage (V) 1.8
Maximum Collector-Emitter Voltage (V) 1200
Maximum Power Dissipation (mW) 600000
Maximum Gate Emitter Voltage (V) ±20
Maximum Continuous Collector Current (A) 100
Maximum Gate Emitter Leakage Current (uA) 0.2
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 150
Supplier Package Case 7DM-1
Military No
Mounting Screw
Package Length 93
Package Width 35
PCB changed 7
Part Status Obsolete
Pin Count 7
Configuration Single Dual Emitter
Channel Type N
RoHS Status Supplier Unconfirmed
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