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DM2G150SH12A Tech Specifications

Category Transistors - IGBTs - Modules
Manufacturer MagnaChip
ECCN (US) EAR99
Maximum Collector-Emitter Voltage (V) 1200
Typical Collector Emitter Saturation Voltage (V) 1.8
Maximum Gate Emitter Voltage (V) ±20
Maximum Power Dissipation (mW) 1250000
Maximum Continuous Collector Current (A) 200
Maximum Gate Emitter Leakage Current (uA) 0.25
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 150
Automotive Unknown
Supplier Package Case 7DM-3
Military No
Mounting Screw
Package Height 29.75(Max)
Package Length 108
Package Width 62
PCB changed 7
Part Status Obsolete
Pin Count 7
Configuration Dual
Channel Type N
RoHS Status Supplier Unconfirmed
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DM2G150SH12A Documents

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