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DM2G200SH12AE Tech Specifications

Category Transistors - IGBTs - Modules
Manufacturer MagnaChip
ECCN (US) EAR99
Maximum Collector-Emitter Voltage (V) 1200
Typical Collector Emitter Saturation Voltage (V) 1.8
Maximum Gate Emitter Voltage (V) ±20
Maximum Power Dissipation (mW) 1350000
Maximum Continuous Collector Current (A) 275
Maximum Gate Emitter Leakage Current (uA) 0.3
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 150
Supplier Package Case 7DM-2
Military No
Mounting Screw
Package Height 29.95(Max)
Package Length 94
Package Width 48
PCB changed 7
Part Status Obsolete
Pin Count 7
Configuration Dual
Channel Type N
RoHS Status Supplier Unconfirmed
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DM2G200SH12AE Documents

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