Microchip 1075MP RF BJT Transistors
65 V 6.5 A
IN STOCK
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Mult. : 1
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1075MP Tech Specifications
| Category | Transistors - Bipolar (BJT) - RF | |
| Manufacturer | Microchip | |
| Lifecycle Status | Production (Last Updated: 2 months ago) | |
| Mount | Chassis Mount, Surface Mount | |
| Surface Mount | YES | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 65 V | |
| RoHS | Compliant | |
| Package Description | CASE 55FW-1, 4 PIN | |
| Package Style | DISK BUTTON | |
| Package Body Material | UNSPECIFIED | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 200 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | 1075MP | |
| Package Shape | ROUND | |
| Manufacturer | Microsemi Corporation | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Risk Rank | 5.53 | |
| Packaging | Bulk | |
| JESD-609 Code | e0 | |
| Pbfree Code | No | |
| ECCN Code | EAR99 |
| Terminal Finish | TIN LEAD | |
| Max Operating Temperature | 200 °C | |
| Min Operating Temperature | -65 °C | |
| Subcategory | BIP RF Small Signal | |
| Max Power Dissipation | 250 W | |
| Terminal Position | RADIAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 4 | |
| JESD-30 Code | O-XRDB-F4 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Collector Emitter Voltage (VCEO) | 65 V | |
| Max Collector Current | 6.5 A | |
| Gain | 8.5 dB | |
| Transition Frequency | 1.15 GHz | |
| Power Dissipation-Max (Abs) | 250 W | |
| Collector Current-Max (IC) | 6.5 A | |
| DC Current Gain-Min (hFE) | 20 | |
| Collector-Emitter Voltage-Max | 65 V | |
| Highest Frequency Band | L BAND | |
| Collector-Base Capacitance-Max | 50 pF |
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