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JANS2N918UB Tech Specifications

Category Fixed Inductors
Manufacturer Microchip
Mounting Type Surface Mount
Package / Case 4-SMD, No Lead
Surface Mount YES
Supplier Device Package UB
Number of Terminals 3Terminals
Transistor Element Material SILICON
Manufacturer Part Number E34-600100-J03XSPKIT-NS
Manufacturer Honeywell
Package Bulk
Current-Collector (Ic) (Max) 50 mA
Mfr Microchip Technology
Product Status Active
Factory Pack QuantityFactory Pack Quantity 1
Brand Microchip / Microsemi
RoHS N
Package Description SMALL OUTLINE, R-CDSO-N3
Package Style SMALL OUTLINE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Operating Temperature-Max 200 °C
Rohs Code No
Package Shape RECTANGULAR
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer MICROSEMI CORP
Risk Rank 1.58
Operating Temperature -65°C ~ 200°C (TJ)
Series Military, MIL-PRF-19500/301
ECCN Code EAR99
HTS Code 8541.21.00.95
Subcategory Transistors
Technology Si
Terminal Position DUAL
Terminal Form NO LEAD
Reach Compliance Code compliant
Pin Count 3
Reference Standard MIL-19500/301H
JESD-30 Code R-CDSO-N3
Qualification Status Qualified
Configuration SINGLE
Power - Max 200 mW
Polarity/Channel Type NPN
Product Type BJTs - Bipolar Transistors
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 3mA, 1V
Current - Collector Cutoff (Max) 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic 400mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max) 15 V
Frequency - Transition -
Power Dissipation-Max (Abs) 0.2 W
Collector Current-Max (IC) 0.05 A
DC Current Gain-Min (hFE) 6
Collector-Emitter Voltage-Max 15 V
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
Collector-Base Capacitance-Max 3 pF
Product Category Bipolar Transistors - BJT
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