Microchip MDS70 RF BJT Transistors
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MDS70 Tech Specifications
| Category | Transistors - Bipolar (BJT) - RF | |
| Manufacturer | Microchip | |
| Surface Mount | YES | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Package Description | FLANGE MOUNT, R-CDFM-F2 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Manufacturer Package Code | CASE 55CX | |
| Operating Temperature-Max | 200 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | MDS70 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Microsemi Corporation | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICROSEMI CORP |
| Risk Rank | 5.8 | |
| ECCN Code | EAR99 | |
| Subcategory | Other Transistors | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Reach Compliance Code | compliant | |
| Pin Count | 2 | |
| JESD-30 Code | R-CDFM-F2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Case Connection | BASE | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 95 W | |
| Collector Current-Max (IC) | 5 A | |
| DC Current Gain-Min (hFE) | 20 | |
| Collector-Emitter Voltage-Max | 65 V | |
| Highest Frequency Band | L BAND |
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