Microchip Technology 1214-30 RF BJT Transistors
4 A
IN STOCK
Min. : 1
Mult. : 1
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1214-30 Tech Specifications
| Category | Transistors - Bipolar (BJT) - RF | |
| Manufacturer | Microchip | |
| Package / Case | 55AW-1 | |
| RoHS | Details | |
| Transistor Polarity | NPN | |
| DC Collector/Base Gain hfe Min | 20 | |
| Collector- Emitter Voltage VCEO Max | 50 V | |
| Emitter- Base Voltage VEBO | 3.5 V | |
| Maximum Operating Temperature | + 200 C | |
| Mounting Styles | SMD/SMT | |
| Maximum DC Collector Current | 4 A | |
| Pd - Power Dissipation | 88 W | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Package Description | , | |
| Manufacturer Part Number | 1214-30 |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Risk Rank | 5.58 | |
| Series | n/a | |
| ECCN Code | EAR99 | |
| Type | Evaluation kit | |
| Reach Compliance Code | compliant | |
| Pin Count | 2 | |
| Operating Frequency | 1.2 GHz to 1.4 GHz | |
| Configuration | Single | |
| Note | n/a | |
| Output Power | 30 W | |
| Transistor Type | Bipolar | |
| Continuous Collector Current | 4 A |
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