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2N4854U/TR Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays
Manufacturer Microchip
Mounting Type Surface Mount
Package / Case 6-SMD, No Lead
Supplier Device Package 6-SMD
Mfr Microchip Technology
Package Tape & Reel (TR)
Product Status Active
Emitter- Base Voltage VEBO 5 V
Pd - Power Dissipation 600 mW
Transistor Polarity NPN, PNP
Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 35 at 100 uA, 10 V
Collector-Emitter Saturation Voltage 400 mV
Minimum Operating Temperature - 65 C
Factory Pack QuantityFactory Pack Quantity 1
Mounting Styles SMD/SMT
Manufacturer Microchip
Brand Microchip Technology
Maximum DC Collector Current 600 mA
DC Current Gain hFE Max 300 at 150 mA, 10 V
RoHS N
Collector- Emitter Voltage VCEO Max 40 V
Series Military, MIL-PRF-19500/421
Operating Temperature -65°C ~ 200°C (TJ)
Packaging Reel
Subcategory Transistors
Technology Si
Configuration Dual
Product Type BJTs - Bipolar Transistors
Transistor Type NPN, PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Current - Collector Cutoff (Max) 10μA (ICBO)
Vce Saturation (Max) @ Ib, Ic 400mV @ 15mA, 150mA
Frequency - Transition -
Collector Base Voltage (VCBO) 60 V
Product Category Bipolar Transistors - BJT
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