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2N7002-G Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Microchip
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Weight 1.437803g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 115mA Tj
Drive Voltage (Max Rds On, Min Rds On) 5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 360mW Ta
Turn Off Delay Time 20 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature HIGH INPUT IMPEDANCE
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 360mW
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Vgs (Max) ±30V
Continuous Drain Current (ID) 115mA
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 60V
Ambient Temperature Range High 150°C
Feedback Cap-Max (Crss) 5 pF
Height 1.12mm
Length 2.92mm
Width 1.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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