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2N7002-G Tech Specifications
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Microchip | |
Factory Lead Time | 14 Weeks | |
Contact Plating | Tin | |
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Number of Pins | 3Pins | |
Weight | 1.437803g | |
Transistor Element Material | SILICON | |
Current - Continuous Drain (Id) @ 25℃ | 115mA Tj | |
Drive Voltage (Max Rds On, Min Rds On) | 5V 10V | |
Number of Elements | 1 Element | |
Power Dissipation (Max) | 360mW Ta | |
Turn Off Delay Time | 20 ns | |
Operating Temperature | -55°C~150°C TJ | |
Packaging | Tape & Reel (TR) | |
Published | 2013 | |
JESD-609 Code | e3 | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 3Terminations | |
ECCN Code | EAR99 | |
Additional Feature | HIGH INPUT IMPEDANCE | |
Terminal Position | DUAL |
Terminal Form | GULL WING | |
Peak Reflow Temperature (Cel) | 260 | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Number of Channels | 1Channel | |
Element Configuration | Single | |
Operating Mode | ENHANCEMENT MODE | |
Power Dissipation | 360mW | |
Turn On Delay Time | 20 ns | |
FET Type | N-Channel | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 7.5 Ω @ 500mA, 10V | |
Vgs(th) (Max) @ Id | 2.5V @ 250μA | |
Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V | |
Vgs (Max) | ±30V | |
Continuous Drain Current (ID) | 115mA | |
Gate to Source Voltage (Vgs) | 30V | |
Drain to Source Breakdown Voltage | 60V | |
Ambient Temperature Range High | 150°C | |
Feedback Cap-Max (Crss) | 5 pF | |
Height | 1.12mm | |
Length | 2.92mm | |
Width | 1.3mm | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant | |
Lead Free | Lead Free |
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2N7002-G Documents
Download datasheets and manufacturer documentation for 2N7002-G
- PCN Design/Specification2N7002 05/Sep/2018
- PCN PackagingPacking Changes 10/Oct/2016
- ConflictMineralStatementMicrochip-company-68.pdf
- Datasheets2N7002
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