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 APT150GT120JR Tech Specifications
| Category | Transistors - IGBTs - Modules | |
| Manufacturer | Microchip | |
| Package / Case | SOT-227-4 | |
| Mounting Type | Chassis Mount | |
| Supplier Device Package | ISOTOP® | |
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 1200 V | |
| Collector-Emitter Saturation Voltage | 3.2 V | |
| Continuous Collector Current at 25 C | 170 A | |
| Gate-Emitter Leakage Current | 900 nA | |
| Pd - Power Dissipation | 830 W | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Maximum Gate Emitter Voltage | 20 V | |
| Mounting Styles | Chassis Mount | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Tradename | Thunderbolt IGBT, ISOTOP | |
| Unit Weight | 1.058219 oz | |
| Package | Tube | |
| Current-Collector (Ic) (Max) | 170 A | 
| Base Product Number | APT150 | |
| Mfr | Microchip Technology | |
| Product Status | Active | |
| Packaging | Tube | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Series | Thunderbolt IGBT® | |
| Configuration | Single | |
| Power - Max | 830 W | |
| Input | Standard | |
| Operating Temperature Range | - 55 C to + 150 C | |
| Current - Collector Cutoff (Max) | 150 µA | |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | |
| Vce(on) (Max) @ Vge, Ic | 3.7V @ 15V, 150A | |
| IGBT Type | NPT | |
| NTC Thermistor | No | |
| Input Capacitance (Cies) @ Vce | 9.3 nF @ 25 V | |
| Product | IGBT Silicon Modules | |
| Height | 9.6 mm | |
| Length | 38.2 mm | |
| Width | 25.4 mm | 
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