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APT75GP120JDQ3 Tech Specifications

Category Transistors - IGBTs - Modules
Manufacturer Microchip
Package / Case SOT-227-4
Mounting Type Chassis Mount
Supplier Device Package ISOTOP®
RoHS Details
Collector- Emitter Voltage VCEO Max 1200 V
Collector-Emitter Saturation Voltage 3.3 V
Continuous Collector Current at 25 C 128 A
Gate-Emitter Leakage Current 100 nA
Pd - Power Dissipation 543 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Maximum Gate Emitter Voltage 20 V
Mounting Styles Chassis Mount
Factory Pack QuantityFactory Pack Quantity 1
Tradename POWER MOS 7 IGBT, ISOTOP
Unit Weight 1.058219 oz
Package Tube
Current-Collector (Ic) (Max) 128 A
Base Product Number APT75GP120
Mfr Microchip Technology
Product Status Active
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Series POWER MOS 7®
Configuration Single
Power Dissipation 543
Power - Max 543 W
Input Standard
Operating Temperature Range - 55 C to + 150 C
Current - Collector Cutoff (Max) 1.25 mA
Voltage - Collector Emitter Breakdown (Max) 1200 V
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 75A
Continuous Collector Current 128
IGBT Type PT
NTC Thermistor No
Input Capacitance (Cies) @ Vce 7.04 nF @ 25 V
Product IGBT Silicon Modules
Height 9.6 mm
Length 38.2 mm
Width 25.4 mm
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