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APT80GP60B2G Tech Specifications

Category Transistors - IGBTs - Modules
Manufacturer Microchip
Package / Case T-Max-3
Mounting Type Through Hole
Supplier Device Package T-MAX™ [B2]
RoHS Details
Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 2.2 V
Continuous Collector Current at 25 C 100 A
Gate-Emitter Leakage Current 100 nA
Pd - Power Dissipation 1041 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Maximum Gate Emitter Voltage 20 V
Mounting Styles Through Hole
Factory Pack QuantityFactory Pack Quantity 1
Package Tube
Current-Collector (Ic) (Max) 100 A
Base Product Number APT80GP60
Mfr Microchip Technology
Product Status Active
Packaging Tube
Series POWER MOS 7®
Configuration Single
Input Type Standard
Power - Max 1041 W
Voltage - Collector Emitter Breakdown (Max) 600 V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 80A
IGBT Type PT
Product IGBT Silicon Modules
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