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APT85GR120JD60 Tech Specifications

Category Transistors - IGBTs - Modules
Manufacturer Microchip
Package / Case ISOTOP-4
Mounting Type Chassis Mount
Supplier Device Package SOT-227
RoHS Details
Collector- Emitter Voltage VCEO Max 1200 V
Collector-Emitter Saturation Voltage 3.5 V
Continuous Collector Current at 25 C 118 A
Gate-Emitter Leakage Current 250 nA
Pd - Power Dissipation 595 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Maximum Gate Emitter Voltage 30 V
Mounting Styles SMD/SMT
Factory Pack QuantityFactory Pack Quantity 1
Package Tube
Current-Collector (Ic) (Max) 116 A
Base Product Number APT85GR120
Mfr Microchip Technology
Product Status Active
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Series -
Configuration Single
Power Dissipation 595
Power - Max 543 W
Input Standard
Current - Collector Cutoff (Max) 1.1 mA
Voltage - Collector Emitter Breakdown (Max) 1200 V
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 85A
Continuous Collector Current 118
IGBT Type NPT
NTC Thermistor No
Input Capacitance (Cies) @ Vce 8.4 nF @ 25 V
Product IGBT Silicon Modules
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