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APTGL475U120DAG Tech Specifications

Category Transistors - IGBTs - Modules
Manufacturer Microchip
Package / Case SP6
Mounting Type Chassis Mount
Supplier Device Package SP6
RoHS Details
Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 1.8 V
Continuous Collector Current at 25 C 610 A
Pd - Power Dissipation 2.307 kW
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 100 C
Maximum Gate Emitter Voltage 20 V
Mounting Styles Chassis Mount
Factory Pack QuantityFactory Pack Quantity 1
Unit Weight 3.880136 oz
Package Bulk
Current-Collector (Ic) (Max) 610 A
Base Product Number APTGL475
Mfr Microchip Technology
Product Status Active
Operating Temperature-Max 175 °C
Rohs Code Yes
Manufacturer Part Number APTGL475U120DAG
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer MICROSEMI CORP
Risk Rank 5.69
Packaging Tube
Operating Temperature -40°C ~ 175°C (TJ)
Series -
ECCN Code EAR99
Reach Compliance Code compliant
Configuration Single
Power Dissipation 2.307
Power - Max 2307 W
Input Standard
Current - Collector Cutoff (Max) 4 mA
Voltage - Collector Emitter Breakdown (Max) 1200 V
Power Dissipation-Max (Abs) 2307 W
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 400A
Collector Current-Max (IC) 610 A
Continuous Collector Current 610
IGBT Type Trench Field Stop
Collector-Emitter Voltage-Max 1200 V
NTC Thermistor No
Gate-Emitter Voltage-Max 20 V
Input Capacitance (Cies) @ Vce 24.6 nF @ 25 V
VCEsat-Max 2.2 V
Product IGBT Silicon Modules
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