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APTGL60DDA120T3G Tech Specifications

Category Transistors - IGBTs - Modules
Manufacturer Microchip
Lifecycle Status Production (Last Updated: 1 month ago)
Package / Case SP3-32
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Number of Pins 16Pins
Supplier Device Package SP3
RoHS Details
Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 1.85 V
Continuous Collector Current at 25 C 80 A
Gate-Emitter Leakage Current 400 nA
Pd - Power Dissipation 280 W
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 100 C
Maximum Gate Emitter Voltage 20 V
Mounting Styles Chassis Mount
Factory Pack QuantityFactory Pack Quantity 1
Unit Weight 5.783519 oz
Package Bulk
Current-Collector (Ic) (Max) 80 A
Base Product Number APTGL60
Mfr Microchip Technology
Product Status Active
Collector-Emitter Breakdown Voltage 1.2 kV
Packaging Tube
Operating Temperature -40°C ~ 175°C (TJ)
Series -
Max Operating Temperature 175 °C
Min Operating Temperature -40 °C
Max Power Dissipation 280 W
Configuration Dual
Element Configuration Dual
Power - Max 280 W
Input Standard
Collector Emitter Voltage (VCEO) 1.2 kV
Max Collector Current 80 A
Current - Collector Cutoff (Max) 250 µA
Voltage - Collector Emitter Breakdown (Max) 1200 V
Input Capacitance 2.77 nF
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 50A
Continuous Collector Current 80
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 2.77 nF @ 25 V
Product IGBT Silicon Modules
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