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APTGT75SK120TG Tech Specifications

Category Transistors - IGBTs - Modules
Manufacturer Microchip
Package / Case SP4
Mounting Type Chassis Mount
Supplier Device Package SP4
RoHS Details
Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 1.7 V
Continuous Collector Current at 25 C 110 A
Gate-Emitter Leakage Current 400 nA
Pd - Power Dissipation 357 W
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 125 C
Maximum Gate Emitter Voltage 20 V
Mounting Styles Chassis Mount
Factory Pack QuantityFactory Pack Quantity 1
Unit Weight 3.880136 oz
Package Bulk
Current-Collector (Ic) (Max) 110 A
Base Product Number APTGT75
Mfr Microchip Technology
Product Status Active
Packaging Tube
Operating Temperature -40°C ~ 150°C (TJ)
Series -
Configuration Single
Power - Max 357 W
Input Standard
Current - Collector Cutoff (Max) 250 µA
Voltage - Collector Emitter Breakdown (Max) 1200 V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
Continuous Collector Current 110
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 5.34 nF @ 25 V
Product IGBT Silicon Modules
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