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DN2625K4-G Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Microchip
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Weight 3.949996g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 1.1A Tj
Drive Voltage (Max Rds On, Min Rds On) 0V
Number of Elements 1 Element
Turn Off Delay Time 10 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2Terminations
ECCN Code EAR99
Additional Feature LOW THRESHOLD
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Channels 1Channel
Element Configuration Single
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5 Ω @ 1A, 0V
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 7.04nC @ 1.5V
Rise Time 20ns
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Continuous Drain Current (ID) 1.1A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 250V
FET Feature Depletion Mode
Height 2.39mm
Length 6.73mm
Width 6.1mm
RoHS Status ROHS3 Compliant
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DN2625K4-G Documents

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