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DN3545N8-G Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Microchip
Factory Lead Time 6 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4Pins
Weight 52.786812mg
Transistor Element Material SILICON
Drive Voltage (Max Rds On, Min Rds On) 0V
Number of Elements 1 Element
Power Dissipation (Max) 1.6W Ta
Turn Off Delay Time 30 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature FAST SWITCHING
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-PSSO-F3
Number of Channels 1Channel
Element Configuration Single
Power Dissipation 1.6W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20 Ω @ 150mA, 0V
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V
Rise Time 30ns
Drain to Source Voltage (Vdss) 450V
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Continuous Drain Current (ID) 200mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.2A
Drain to Source Breakdown Voltage 450V
Pulsed Drain Current-Max (IDM) 0.3A
FET Feature Depletion Mode
Height 1.6mm
Length 4.6mm
Width 2.6mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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