Microchip Technology HUM2010 RF Diodes
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HUM2010 Tech Specifications
| Category | Diodes - RF | |
| Manufacturer | Microchip | |
| Surface Mount | NO | |
| Diode Element Material | SILICON | |
| Number of Terminals | 1Terminal | |
| RoHS | N | |
| Maximum Diode Capacitance | 4 pF | |
| Maximum Series Resistance @ Maximum IF | 200 mOhms | |
| If - Forward Current | 500 mA | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Maximum Operating Frequency | 0.5 GHz | |
| Carrier Life | 30 us | |
| Ir - Reverse Current | 10 uA | |
| Pd - Power Dissipation | 13 W | |
| Factory Pack QuantityFactory Pack Quantity | 15 | |
| Vr - Reverse Voltage | 1000 V | |
| Package Style | POST/STUD MOUNT | |
| Package Body Material | METAL | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | No | |
| Manufacturer Part Number | HUM2010 | |
| Package Shape | ROUND | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Risk Rank | 5.74 |
| Packaging | Reel | |
| JESD-609 Code | e4 | |
| Pbfree Code | No | |
| ECCN Code | EAR99 | |
| Type | High Power Pin Diodes | |
| Terminal Finish | GOLD | |
| Applications | SWITCHING | |
| Additional Feature | HIGH RELIABILITY, LOW DISTORTION | |
| HTS Code | 8541.10.00.80 | |
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | O-MUPM-X1 | |
| Qualification Status | Not Qualified | |
| Configuration | Single | |
| Diode Type | PIN DIODE | |
| Case Connection | CATHODE | |
| Breakdown Voltage-Min | 1000 V | |
| Reverse Test Voltage | 100 V | |
| Diode Capacitance-Nom | 3.4 pF | |
| Diode Capacitance-Max | 4 pF | |
| Minority Carrier Lifetime-Nom | 30 µs | |
| Diode Res Test Current | 500 mA | |
| Diode Res Test Frequency | 4 MHz | |
| Diode Forward Resistance-Max | 0.2 Ω | |
| Vf - Forward Voltage | 0.85 V |
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