Microchip Technology JAN2N2369AUA/TR Single BJT Transistors
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Min. : 1
Mult. : 1
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JAN2N2369AUA/TR Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | Microchip | |
| Mounting Type | Through Hole | |
| Package / Case | TO-206AA, TO-18-3 Metal Can | |
| Supplier Device Package | TO-18 (TO-206AA) | |
| Mfr | Microchip Technology | |
| Package | Tape & Reel (TR) | |
| Product Status | Active | |
| Emitter- Base Voltage VEBO | 4.5 V | |
| Pd - Power Dissipation | 360 mW | |
| Transistor Polarity | NPN | |
| Maximum Operating Temperature | + 200 C | |
| DC Collector/Base Gain hfe Min | 20 at 100mA, 1 V | |
| Collector-Emitter Saturation Voltage | 200 mV | |
| Minimum Operating Temperature | - 65 C | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Mounting Styles | SMD/SMT | |
| Manufacturer | Microchip | |
| Brand | Microchip / Microsemi |
| Maximum DC Collector Current | 100 mA | |
| DC Current Gain hFE Max | 120 at 100 mA, 1 V | |
| RoHS | N | |
| Collector- Emitter Voltage VCEO Max | 15 V | |
| Series | Military, MIL-PRF-19500/317 | |
| Operating Temperature | -65°C ~ 200°C (TJ) | |
| Subcategory | Transistors | |
| Technology | Si | |
| Configuration | Single | |
| Power - Max | 360 mW | |
| Product Type | BJTs - Bipolar Transistors | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 100mA, 1V | |
| Current - Collector Cutoff (Max) | 400nA | |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 10mA, 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 15 V | |
| Frequency - Transition | - | |
| Collector Base Voltage (VCBO) | 40 V | |
| Product Category | Bipolar Transistors - BJT |
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