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JANSL2N3810 Tech Specifications
| Category | Transistors - Bipolar (BJT) - Arrays | |
| Manufacturer | Microchip | |
| Mounting Type | Through Hole | |
| Package / Case | TO-78-6 Metal Can | |
| Supplier Device Package | TO-78-6 | |
| Mfr | Microchip Technology | |
| Package | Bulk | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 50mA | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Manufacturer | Microchip | |
| Brand | Microchip / Microsemi |
| RoHS | N | |
| Series | Military, MIL-PRF-19500 /336 | |
| Operating Temperature | -65°C ~ 200°C (TJ) | |
| Power - Max | 350mW | |
| Transistor Type | 2 PNP (Dual) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 1mA, 5V | |
| Current - Collector Cutoff (Max) | 10μA (ICBO) | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100μA, 1mA | |
| Voltage - Collector Emitter Breakdown (Max) | 60V | |
| Frequency - Transition | - | |
| Product Category | Microchip Technology |
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