Microchip Technology JANSR2N3810U/TR Arrays BJT Transistors
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JANSR2N3810U/TR Tech Specifications
| Category | Transistors - Bipolar (BJT) - Arrays | |
| Manufacturer | Microchip | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-SMD, No Lead | |
| Supplier Device Package | 6-SMD | |
| Mfr | Microchip Technology | |
| Package | Tape & Reel (TR) | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 50mA | |
| Emitter- Base Voltage VEBO | 5 V | |
| Pd - Power Dissipation | 350 mW | |
| Transistor Polarity | PNP | |
| Maximum Operating Temperature | + 200 C | |
| DC Collector/Base Gain hfe Min | 100 at 10 uA, 5 V | |
| Collector-Emitter Saturation Voltage | 200 mV | |
| Minimum Operating Temperature | - 65 C | |
| Factory Pack QuantityFactory Pack Quantity | 50 | |
| Mounting Styles | SMD/SMT | |
| Manufacturer | Microchip | |
| Brand | Microchip / Microsemi |
| Maximum DC Collector Current | 50 mA | |
| DC Current Gain hFE Max | 450 at 100 uA, 5 V | |
| RoHS | N | |
| Collector- Emitter Voltage VCEO Max | 60 V | |
| Series | Military, MIL-PRF-19500/336 | |
| Operating Temperature | -65°C ~ 200°C (TJ) | |
| Packaging | Reel | |
| Subcategory | Transistors | |
| Technology | Si | |
| Configuration | Dual | |
| Power - Max | 350mW | |
| Product Type | BJTs - Bipolar Transistors | |
| Transistor Type | 2 PNP (Dual) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 1mA, 5V | |
| Current - Collector Cutoff (Max) | 10μA (ICBO) | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 100μA | |
| Voltage - Collector Emitter Breakdown (Max) | 60V | |
| Frequency - Transition | - | |
| Collector Base Voltage (VCBO) | 60 V | |
| Product Category | Bipolar Transistors - BJT |
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