Microchip Technology JANTX2N3637L Single BJT Transistors
60 1 A 175 V 1 W
IN STOCK
: 143
Min. : 1
Mult. : 1
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JANTX2N3637L Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | Microchip | |
| Package / Case | TO-205AA, TO-5-3 Metal Can | |
| Mounting Type | Through Hole | |
| Surface Mount | NO | |
| Supplier Device Package | TO-5 | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | Microchip Technology | |
| Base Product Number | 2N3637 | |
| Current-Collector (Ic) (Max) | 1 A | |
| Product Status | Active | |
| Package | Bulk | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Manufacturer | Microchip | |
| Brand | Microchip / Microsemi | |
| RoHS | N | |
| Part Package Code | TO-5 | |
| Risk Rank | 5.17 | |
| Turn-off Time-Max (toff) | 650 ns | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Life Cycle Code | Active | |
| Number of Elements | 1 Element | |
| Package Shape | ROUND | |
| Turn-on Time-Max (ton) | 200 ns | |
| Manufacturer Part Number | JANTX2N3637L | |
| Rohs Code | No | |
| Operating Temperature-Max | 200 °C | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Package Body Material | METAL | |
| Package Style | CYLINDRICAL | |
| Package Description | CYLINDRICAL, O-MBCY-W3 | |
| Series | Military, MIL-PRF-19500/357 | |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Packaging | Tray | |
| JESD-609 Code | e0 | |
| Pbfree Code | No | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| HTS Code | 8541.29.00.95 | |
| Subcategory | Transistors | |
| Technology | Si | |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 3 | |
| Reference Standard | MIL-19500/357H | |
| JESD-30 Code | O-MBCY-W3 | |
| Qualification Status | Qualified | |
| Configuration | SINGLE | |
| Power - Max | 1 W | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | PNP | |
| Product Type | BJTs - Bipolar Transistors | |
| Transistor Type | PNP | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 10V | |
| Current - Collector Cutoff (Max) | 10μA | |
| JEDEC-95 Code | TO-5 | |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA | |
| Voltage - Collector Emitter Breakdown (Max) | 175 V | |
| Frequency - Transition | - | |
| Power Dissipation-Max (Abs) | 1 W | |
| Collector Current-Max (IC) | 1 A | |
| DC Current Gain-Min (hFE) | 60 | |
| Collector-Emitter Voltage-Max | 175 V | |
| Product Category | Bipolar Transistors - BJT |
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