Microchip Technology TC6320TG-G MOSFETs Transistors Arrays
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TC6320TG-G Tech Specifications
| Category | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | Microchip | |
| Factory Lead Time | 6 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Number of Pins | 8Pins | |
| Weight | 84.99187mg | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 20 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2010 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | TC6320 | |
| Number of Channels | 2Channels | |
| Operating Mode | ENHANCEMENT MODE | |
| Turn On Delay Time | 10 ns | |
| FET Type | N and P-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 7 Ω @ 1A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 25V | |
| Rise Time | 15ns | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Fall Time (Typ) | 15 ns | |
| Continuous Drain Current (ID) | -2A | |
| Threshold Voltage | 2V | |
| Drain-source On Resistance-Max | 7Ohm | |
| Drain to Source Breakdown Voltage | 200V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Standard | |
| Height | 1.65mm | |
| Length | 4.9mm | |
| Width | 3.9mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |
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TC6320TG-G Documents
Download datasheets and manufacturer documentation for TC6320TG-G
- PCN Design/SpecificationTC6320 05/Oct/2017
- ConflictMineralStatementMicrochip-company-68.pdf
- DatasheetsTC6320
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