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TN2130K1-G Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Microchip
Factory Lead Time 2 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Weight 1.437803g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 85mA Tj
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 360mW Tc
Turn Off Delay Time 12 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 360mW
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25 Ω @ 120mA, 4.5V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Rise Time 7ns
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Continuous Drain Current (ID) 85mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.085A
Drain to Source Breakdown Voltage 300V
Feedback Cap-Max (Crss) 5 pF
Height 950μm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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