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TN2540N8-G Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Microchip
Factory Lead Time 2 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4Pins
Weight 52.786812mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 260mA Tj
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 1.6W Ta
Turn Off Delay Time 25 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature LOW THRESHOLD
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-PSSO-F3
Qualification Status Not Qualified
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.6W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 125pF @ 25V
Rise Time 15ns
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 260mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.57A
Drain to Source Breakdown Voltage 400V
Height 1.6mm
Length 4.6mm
Width 2.6mm
RoHS Status ROHS3 Compliant
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