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TP2104K1-G Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Microchip
Factory Lead Time 5 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Weight 1.437803g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 160mA Tj
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 360mW Ta
Turn Off Delay Time 5 ns
Operating Temperature -55°C~150°C
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature LOW THRESHOLD
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 360mW
Turn On Delay Time 4 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
Rise Time 4ns
Drain to Source Voltage (Vdss) 40V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Continuous Drain Current (ID) 160mA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 6Ohm
Drain to Source Breakdown Voltage -40V
Height 950μm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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