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VN2410L-G Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Microchip
Factory Lead Time 6 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3Pins
Weight 453.59237mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 190mA Tj
Drive Voltage (Max Rds On, Min Rds On) 2.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 1W Tc
Turn Off Delay Time 23 ns
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2005
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature HIGH INPUT IMPEDANCE
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT APPLICABLE
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Qualification Status Not Qualified
Number of Channels 1Channel
Voltage 240V
Element Configuration Single
Current 2A
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 125pF @ 25V
Rise Time 8ns
Vgs (Max) ±20V
Fall Time (Typ) 24 ns
Continuous Drain Current (ID) 190mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 240V
Feedback Cap-Max (Crss) 20 pF
Height 5.334mm
Length 5.21mm
Width 4.19mm
RoHS Status ROHS3 Compliant
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