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VP2450N8-G Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Microchip
Factory Lead Time 6 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4Pins
Weight 52.786812mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 160mA Tj
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 1.6W Ta
Turn Off Delay Time 45 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-PSSO-F3
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.6W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 25V
Rise Time 25ns
Drain to Source Voltage (Vdss) 500V
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 160mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -500V
Pulsed Drain Current-Max (IDM) 0.8A
Height 1.6mm
Length 4.6mm
Width 2.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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VP2450N8-G Documents

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