VRF2933 Tech Specifications

Category Transistors - FETs, MOSFETs - RF
Manufacturer Microchip
Package / Case M177
Surface Mount YES
Supplier Device Package M177
Number of Terminals 4Terminals
Transistor Element Material SILICON
Unit Weight 1.101341 oz
Vgs th - Gate-Source Threshold Voltage 3.6 V
Vgs - Gate-Source Voltage 40 V
Factory Pack QuantityFactory Pack Quantity 1
Pd - Power Dissipation 648 W
Forward Transconductance - Min 8 mS
Maximum Operating Temperature + 150 C
Minimum Operating Temperature - 65 C
Vds - Drain-Source Breakdown Voltage 180 V
Id - Continuous Drain Current 42 A
Transistor Polarity N-Channel
RoHS Details
Continuous Drain Current Id 42
Package Bulk
Base Product Number VRF2933
Mfr Microchip Technology
Product Status Active
Voltage Rated 170 V
Mounting Styles Flange Mount
Rds On - Drain-Source Resistance -
Package Description 0.630 INCH, ROHS COMPLIANT, M177, SOE, 4 PIN
Package Style FLANGE MOUNT
Package Body Material CERAMIC, METAL-SEALED COFIRED
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 200 °C
Rohs Code Yes
Manufacturer Part Number VRF2933
Package Shape ROUND
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer MICROSEMI CORP
Risk Rank 2.19
Drain Current-Max (ID) 40 A
Series -
ECCN Code EAR99
Type RF Power MOSFET
Current Rating (Amps) 2mA
Terminal Position RADIAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Frequency 150MHz
JESD-30 Code O-CRFM-F4
Qualification Status Not Qualified
Operating Frequency 30 MHz
Configuration N-Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation 648
Case Connection SOURCE
Output Power 300 W
Current - Test 250 mA
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Operating Temperature Range - 65 C to + 150 C
Gain 25 dB
DS Breakdown Voltage-Min 170 V
Channel Type N
Power - Output 300W
FET Technology METAL-OXIDE SEMICONDUCTOR
Noise Figure -
Voltage - Test 50 V
Highest Frequency Band VERY HIGH FREQUENCY BAND
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