VRF3933 Tech Specifications

Category Transistors - FETs, MOSFETs - RF
Manufacturer Microchip
Surface Mount YES
Number of Terminals 4Terminals
Transistor Element Material SILICON
RoHS Details
Transistor Polarity N-Channel
Id - Continuous Drain Current 20 A
Vds - Drain-Source Breakdown Voltage 260 V
Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C
Forward Transconductance - Min 8 mS
Pd - Power Dissipation 648 W
Factory Pack QuantityFactory Pack Quantity 1
Vgs - Gate-Source Voltage 40 V
Vgs th - Gate-Source Threshold Voltage 3.6 V
Unit Weight 1.292085 oz
Package Style FLANGE MOUNT
Package Body Material CERAMIC, METAL-SEALED COFIRED
Operating Temperature-Max 200 °C
Rohs Code Yes
Manufacturer Part Number VRF3933
Package Shape ROUND
Number of Elements 1 Element
Part Life Cycle Code Not Recommended
Ihs Manufacturer MICROSEMI CORP
Risk Rank 8.44
Drain Current-Max (ID) 20 A
Type RF Power MOSFET
Terminal Position RADIAL
Terminal Form FLAT
Reach Compliance Code compliant
JESD-30 Code O-CRFM-F4
Operating Frequency 30 MHz
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Output Power 350 W
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Operating Temperature Range - 65 C to + 150 C
Gain 28 dB
Drain Current-Max (Abs) (ID) 20 A
DS Breakdown Voltage-Min 250 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band VERY HIGH FREQUENCY BAND
Power Gain-Min (Gp) 23 dB
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