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MJD112-TP Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | Micro Commercial Components | |
| Factory Lead Time | 12 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 2A | |
| Number of Elements | 1 Element | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2008 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | MJD112 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Power - Max | 1W | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A 3V | |
| Current - Collector Cutoff (Max) | 20nA | |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A | |
| Voltage - Collector Emitter Breakdown (Max) | 100V | |
| Transition Frequency | 25MHz | |
| Frequency - Transition | 25MHz | |
| RoHS Status | ROHS3 Compliant |
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MJD112-TP Documents
Download datasheets and manufacturer documentation for MJD112-TP
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