Micro Commercial Co MMDT5551-TP Arrays BJT Transistors
IN STOCK
: 11382
Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please sendRFQ, we will respond immediately
MMDT5551-TP Tech Specifications
| Category | Transistors - Bipolar (BJT) - Arrays | |
| Manufacturer | Micro Commercial Components | |
| Factory Lead Time | 12 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 200mA | |
| Number of Elements | 2 Elements | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2000 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Base Part Number | MMDT5551 | |
| Pin Count | 6 | |
| JESD-30 Code | R-PDSO-G6 | |
| Qualification Status | Not Qualified | |
| Configuration | SEPARATE, 2 ELEMENTS | |
| Power - Max | 200mW | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | NPN | |
| Transistor Type | 2 NPN (Dual) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA 5V | |
| Current - Collector Cutoff (Max) | 50nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 1mA, 10mA | |
| Voltage - Collector Emitter Breakdown (Max) | 160V | |
| Transition Frequency | 100MHz | |
| Frequency - Transition | 300MHz | |
| Power Dissipation-Max (Abs) | 0.2W | |
| RoHS Status | ROHS3 Compliant |
Select at least one checkbox above to show similar products in this category.
MMDT5551-TP Documents
Download datasheets and manufacturer documentation for MMDT5551-TP
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ