Micro Electronics Corporation 2N3678 Single BJT Transistors
0.8 W 55 V 0.8 A 40
IN STOCK
Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please sendRFQ, we will respond immediately
2N3678 Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | Micro Crystal | |
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | MICRO ELECTRONICS LTD | |
| Part Package Code | TO-39 | |
| Package Description | CYLINDRICAL, O-MBCY-W3 | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Transition Frequency-Nom (fT) | 250 MHz |
| ECCN Code | EAR99 | |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | O-MBCY-W3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | NPN | |
| JEDEC-95 Code | TO-39 | |
| Power Dissipation-Max (Abs) | 0.8 W | |
| Collector Current-Max (IC) | 0.8 A | |
| DC Current Gain-Min (hFE) | 40 | |
| Collector-Emitter Voltage-Max | 55 V |
Select at least one checkbox above to show similar products in this category.
2N3678 Documents
Download datasheets and manufacturer documentation for 2N3678
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ