Micro Electronics Corporation 2N3855A Single BJT Transistors
30 V 0.62 W 0.1 A 60
IN STOCK
Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please sendRFQ, we will respond immediately
2N3855A Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | Micro Crystal | |
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | MICRO ELECTRONICS LTD | |
| Part Package Code | TO-92 | |
| Package Description | CYLINDRICAL, O-PBCY-T3 | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Transition Frequency-Nom (fT) | 130 MHz |
| ECCN Code | EAR99 | |
| Terminal Position | BOTTOM | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | O-PBCY-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Polarity/Channel Type | NPN | |
| JEDEC-95 Code | TO-92 | |
| Power Dissipation-Max (Abs) | 0.62 W | |
| Collector Current-Max (IC) | 0.1 A | |
| DC Current Gain-Min (hFE) | 60 | |
| Collector-Emitter Voltage-Max | 30 V |
Select at least one checkbox above to show similar products in this category.
2N3855A Documents
Download datasheets and manufacturer documentation for 2N3855A
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ