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NAND01GW3B2AZA6E Tech Specifications

Category USB Flash Drives
Manufacturer Micron Technology
EU RoHS Compliant
ECCN (US) 3A991.b.1.a
Automotive No
PPAP No
Cell Type NAND
Chip Density (bit) 1G
Block Organization Symmetrical
Address Bus Width (bit) 28
Number of Bits/Word (bit) 8Bits/Word (bit)s
Number of Words 128MWord
Programmability Yes
Timing Type Asynchronous
Max. Access Time (ns) 25000
Maximum Erase Time (S) 0.003/Block
Maximum Page Access Time (ns) 50(Min)
Maximum Programming Time (ms) 0.7/Page
Interface Type Parallel
Minimum Operating Supply Voltage (V) 2.7
Typical Operating Supply Voltage (V) 3.3|3
Maximum Operating Supply Voltage (V) 3.6
Operating Current (mA) 30
Program Current (mA) 30
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 85
Supplier Temperature Grade Industrial
Command Compatible No
ECC Support Yes
Support of Page Mode Yes
Minimum Endurance (Cycles) 100000
Mounting Surface Mount
Package Height 0.7(Max)
Package Width 9.5
Package Length 12
PCB changed 63
Standard Package Name BGA
Supplier Package VFBGA
Lead Shape Ball
Packaging Tray
Part Status Obsolete
Pin Count 63
Architecture Sectored
Sector Size 128Kbyte x 1024
Page Size 2Kbyte
Boot Block No
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