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- MT16HTF51264HZ-800C1
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MT16HTF51264HZ-800C1 Tech Specifications
Category | Memory - Modules | |
Manufacturer | Micron Technology | |
Factory Lead Time | 5 Weeks | |
Contact Plating | Gold | |
Mount | Socket | |
Package / Case | 200-SODIMM | |
Number of Pins | 200Pins | |
Memory Types | DDR2 SDRAM | |
Number of Elements | 16 Elements | |
Published | 2010 | |
JESD-609 Code | e4 | |
Pbfree Code | yes | |
Part Status | Obsolete | |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
Number of Terminations | 200Terminations | |
ECCN Code | EAR99 | |
Max Operating Temperature | 70°C | |
Min Operating Temperature | 0°C | |
Additional Feature | AUTO/SELF REFRESH; WD-MAX | |
HTS Code | 8542.32.00.36 | |
Terminal Position | ZIG-ZAG | |
Peak Reflow Temperature (Cel) | 260 | |
Number of Functions | 1Function | |
Supply Voltage | 1.8V | |
Terminal Pitch | 0.6mm |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Pin Count | 200 | |
Operating Supply Voltage | 1.8V | |
Temperature Grade | COMMERCIAL | |
Max Supply Voltage | 1.9V | |
Min Supply Voltage | 1.7V | |
Memory Size | 4GB | |
Number of Ports | 1Port | |
Speed | 800MT/s | |
Clock Frequency | 400MHz | |
Data Bus Width | 64b | |
Organization | 512MX64 | |
Output Characteristics | 3-STATE | |
Memory Width | 64 | |
Memory Density | 34359738368 bit | |
Max Frequency | 800MHz | |
Access Time (Max) | 0.4 ns | |
I/O Type | COMMON | |
Refresh Cycles | 8192 | |
Access Mode | DUAL BANK PAGE BURST | |
Length | 67.6mm | |
Height Seated (Max) | 30.15mm | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant |
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MT16HTF51264HZ-800C1 Documents
Download datasheets and manufacturer documentation for MT16HTF51264HZ-800C1
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