Microsemi APT1001R3AN Single MOSFETs Transistors
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APT1001R3AN Tech Specifications
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Microsemi | |
| Surface Mount | NO | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Package Description | FLANGE MOUNT, O-MBFM-P2 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | METAL | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | No | |
| Manufacturer Part Number | APT1001R3AN | |
| Package Shape | ROUND | |
| Manufacturer | Microsemi Corporation | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ADVANCED POWER TECHNOLOGY INC | |
| Risk Rank | 5.61 | |
| Drain Current-Max (ID) | 8.5 A |
| JESD-609 Code | e0 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Subcategory | FET General Purpose Power | |
| Terminal Position | BOTTOM | |
| Terminal Form | PIN/PEG | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | O-MBFM-P2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Operating Mode | ENHANCEMENT MODE | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-3 | |
| Drain Current-Max (Abs) (ID) | 8.5 A | |
| Drain-source On Resistance-Max | 1.3 Ω | |
| DS Breakdown Voltage-Min | 1000 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 230 W | |
| Power Dissipation Ambient-Max | 230 W |
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