Microsemi SG2013J-883B Arrays BJT Transistors
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SG2013J-883B Tech Specifications
| Category | Transistors - Bipolar (BJT) - Arrays | |
| Manufacturer | Microsemi | |
| Mounting Type | Through Hole | |
| Package / Case | -- | |
| Supplier Device Package | 16-CDIP | |
| Current-Collector (Ic) (Max) | 600mA | |
| Operating Temperature | 150°C (TJ) | |
| Series | -- | |
| Packaging | Tube |
| Part Status | Active | |
| Power - Max | -- | |
| Transistor Type | 7 NPN Darlington | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 900 @ 500mA, 2V | |
| Current - Collector Cutoff (Max) | -- | |
| Vce Saturation (Max) @ Ib, Ic | 1.9V @ 600µA, 500mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Frequency - Transition | -- |
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