Microsemi Corporation 2N3811 Arrays BJT Transistors
250mV 50mA
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2N3811 Tech Specifications
| Category | Transistors - Bipolar (BJT) - Arrays | |
| Manufacturer | Microsemi | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-78-6 Metal Can | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 60V | |
| Number of Elements | 2 Elements | |
| Operating Temperature | -65°C~200°C TJ | |
| Packaging | Bulk | |
| Published | 2007 | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN LEAD | |
| HTS Code | 8541.21.00.95 |
| Max Power Dissipation | 350mW | |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Pin Count | 8 | |
| JESD-30 Code | O-MBCY-W8 | |
| Configuration | SEPARATE, 2 ELEMENTS | |
| Power - Max | 350mW | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | PNP | |
| Transistor Type | 2 PNP (Dual) | |
| Collector Emitter Voltage (VCEO) | 250mV | |
| Max Collector Current | 50mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA 5V | |
| Current - Collector Cutoff (Max) | 10μA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100μA, 1mA | |
| Transition Frequency | 100MHz | |
| Collector Base Voltage (VCBO) | 60V | |
| Radiation Hardening | No | |
| RoHS Status | Non-RoHS Compliant |
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2N3811 Documents
Download datasheets and manufacturer documentation for 2N3811
- Datasheets2N3810(L,U), 2N3811(L,U)
- PCN Obsolescence/ EOL2N3811 Devices 19/Jun/2015
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